BC808 -0.8a , -30v pnp plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free feature suitable for af-driver stages and low power output stages complementary to bc818 classification of h fe(1) product-rank BC808-16 BC808-25 BC808-40 range 100~250 160~400 250~630 marking code 5e 5f 5g package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -30 v collector to emitter voltage v ceo -25 v emitter to base voltage v ebo -5 v collector current - continuous i c -800 ma collector power dissipation p c 300 mw junction, storage temperature t j , t stg 150, -65 ~ 150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -30 - - v i c = -100 a, i e =0 collector to emitter breakdown voltage v (br)ceo -25 - - v i c = -10ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -100 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -25v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 dc current gain h fe (1) 100 - 630 v ce = -1v, i c = -100ma h fe (2) 60 - - v ce = -1v, i c = -300ma collector to emitter saturation voltage v ce(sat) - - -0.7 v i c = -500ma, i b = -50ma base to emitter saturation voltage v be - - -1.2 v v ce = -1v, i c = -300ma transition frequency f t - 100 - mhz v ce = -5v, i c = -10ma, f=50mh z collector output capacitance c ob - 12 - pf v cb = -10v, i e =0, f=1mh z sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
BC808 -0.8a , -30v pnp plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
BC808 -0.8a , -30v pnp plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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